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| TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES * * * * * * * * * * * Package type: leaded Package form: T-13/4 Dimensions (in mm): O 5 Leads with stand-off Peak wavelength: p = 950 nm High reliability Angle of half intensity: = 22 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC 94 8390 DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. with APPLICATIONS * Infrared remote control and free air transmission systems with low forward voltage and small package requirements * Emitter in transmissive sensors * Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) 22 22 22 P (nm) 950 950 950 tr (ns) 800 800 800 TSUS5400 14 TSUS5401 17 TSUS5402 20 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSUS5400 TSUS5401 TSUS5402 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-13/4 T-13/4 T-13/4 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 150 300 2.5 170 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW C C C C K/W tp/T = 0.5, tp = 100 s tp = 100 s t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB www.vishay.com 284 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81056 Rev. 1.6, 05-Sep-08 TSUS5400, TSUS5401, TSUS5402 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 180 120 100 80 60 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21314 RthJA = 230 K/W IF - Forward Current (mA) RthJA = 230 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21313 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKe p TKp tr tr tf tf d 30 - 0.8 22 950 50 0.2 800 400 800 400 2.9 MIN. TYP. 1.3 - 1.3 100 MAX. 1.7 UNIT V mV/K A pF %/K deg nm nm nm/K ns ns ns ns mm TYPE DEDICATED CHARACTERISTICS PARAMETER Forward voltage TEST CONDITION IF = 1.5 A, tp = 100 s PART TSUS5400 TSUS5401 TSUS5402 TSUS5400 IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 s TSUS5401 TSUS5402 TSUS5400 TSUS5401 TSUS5402 TSUS5400 Radiant power IF = 100 mA, tp = 20 ms TSUS5401 TSUS5402 Note Tamb = 25 C, unless otherwise specified Document Number: 81056 Rev. 1.6, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 285 SYMBOL VF VF VF Ie Ie Ie Ie Ie Ie e e e 7 10 15 60 85 120 MIN. TYP. 2.2 2.2 2.2 14 17 20 140 160 190 13 14 15 MAX. 3.4 3.4 2.7 35 35 35 UNIT V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10 1 Ie - Radiant Intensity (mW/sr) 1000 TSUS 5401 100 TSUS 5402 I F - Forward Current (A) I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 -2 10 10 TSUS5400 1 94 7989 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 7997 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1000 - Radiant Power (mW) e TSUS 5402 100 TSUS5400 10 I F - Forward Current (mA) 1 0 1 2 3 4 0.1 10 0 94 7998 V F - Forward Voltage (V) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 VF rel - Relative Forward Voltage (V) 1.6 1.1 IF = 10 mA 1.2 IF = 20 mA 0.8 0.9 Ie rel; e rel 0 20 40 60 80 100 1.0 0.8 0.7 0.4 94 7990 Tamb - Ambient Temperature (C) 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 286 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81056 Rev. 1.6, 05-Sep-08 TSUS5400, TSUS5401, TSUS5402 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 0 10 20 30 e rel - Relative Radiant Power 1.0 I e rel - Relative Radiant Intensity 1.25 40 1.0 0.9 0.8 0.7 50 60 70 80 0.75 0.5 0.25 IF = 100 mA 0 900 950 1000 0.6 94 7999 0.4 0.2 0 0.2 0.4 0.6 94 7994 - Wavelength (nm) Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C 5.8 0.15 R 2.49 (sphere) 0.3 0.3 0.15 (4.1) 11.9 < 0.7 8.7 7.7 34.9 0.55 Area not plane 1.2 + 0.2 - 0.1 5 0.15 0.25 1.5 0.5 + 0.15 - 0.05 technical drawings according to DIN specifications 6.544-5258.01-4 Issue: 4; 23.04.98 96 12119 0.5 + 0.15 - 0.05 2.54 nom. Document Number: 81056 Rev. 1.6, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 287 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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